font test
Visitez notre section de produits en promotions pour des rabais importants!
- |
- Nouveaux produits
- |
- Aubaines
- |
- Catalogue
- en
EST : 800 361-2568
-
Produits
- Produits Ordinateur
- Mémoire Flash & SSD
- Électronique
- Audio / Vidéo
- Produits DEL
- Accessoires
-
Chargeurs / Batteries
Chargeurs / Batteries
- Adaptateur CA (remplacement)
- Adaptateur CA (universel)
- Adaptateur d'auto
- Barre d'alimentation
- Batterie d'usage général
- Batterie de remplacement
- Batteries rechargeables et chargeur
- Bloc pile portable
- Chargeur USB maison
- Chargeur USB pour voiture
- Chargeurs USB-C (Tablette/Portable)
- Recharge sans-fil (Qi)
- Produits Promotionel
- Sélection GAMERS
- Liquidation
- Logiciels
- Marques
- Récupération des données
- Mes services
- Configurateurs
- Promotions
- Accueil>
- Catalogue>
- Produits Ordinateur>
- Mémoire DIMM>
- DDR3 - Mémoire "Gaming">
- Mémoire 1600MHZ DDR3 CL10 DIMM (KIT de 2) HYPERX FURY BLUE SERIES de 16Go de Kingston
Appuyez deux fois et maintenez enfoncer pour un gros plan.
Passer en survol l'image pour zoomer.
Mémoire 1600MHZ DDR3 CL10 DIMM (KIT de 2) HYPERX FURY BLUE SERIES de 16Go de Kingston
Code de produit : 104853 (HX316C10FK2/16)
UPC : 740617230437
HyperX HX316C10FK2/16 is a kit of two 1G x 64-bit (8GB)
DDR3-1600 CL10 SDRAM (Synchronous DRAM) 2Rx8 memory
modules, based on sixteen 512M x 8-bit DDR3 FBGA components per module. Total kit capacity is 16GB. Each module kit has been tested to run at DDR3-1600 at a low latency timing of 10-10-10 at 1.5V. Additional timing parameters are shown in the PnP Timing Parameters section below. FEATURES
JEDEC standard 1.5V (1.425V ~1.575V) Power Supply
VDDQ = 1.5V (1.425V ~ 1.575V)
800MHz fCK for 1600Mb/sec/pin
8 independent internal bank
Programmable CAS Latency: 11, 10, 9, 8, 7, 6
Programmable Additive Latency: 0, CL - 2, or CL - 1 clock
8-bit pre-fetch
Burst Length: 8 (Interleave without any limit, sequential with starting address "000" only), 4 with tCCD = 4 which does not allow seamless read or write [either on the fly using A12 or MRS]
Bi-directional Differential Data Strobe
Internal(self) calibration : Internal self calibration through ZQ pin (RZQ : 240 ohm ± 1%)
On Die Termination using ODT pin
Average Refresh Period 7.8us at lower than TCASE 85°C,
3.9us at 85°C < TCASE < 95°C
Asynchronous Reset
Height 1.291" (32.80mm) w/heatsink, double sided
component
DDR3-1600 CL10 SDRAM (Synchronous DRAM) 2Rx8 memory
modules, based on sixteen 512M x 8-bit DDR3 FBGA components per module. Total kit capacity is 16GB. Each module kit has been tested to run at DDR3-1600 at a low latency timing of 10-10-10 at 1.5V. Additional timing parameters are shown in the PnP Timing Parameters section below. FEATURES
JEDEC standard 1.5V (1.425V ~1.575V) Power Supply
VDDQ = 1.5V (1.425V ~ 1.575V)
800MHz fCK for 1600Mb/sec/pin
8 independent internal bank
Programmable CAS Latency: 11, 10, 9, 8, 7, 6
Programmable Additive Latency: 0, CL - 2, or CL - 1 clock
8-bit pre-fetch
Burst Length: 8 (Interleave without any limit, sequential with starting address "000" only), 4 with tCCD = 4 which does not allow seamless read or write [either on the fly using A12 or MRS]
Bi-directional Differential Data Strobe
Internal(self) calibration : Internal self calibration through ZQ pin (RZQ : 240 ohm ± 1%)
On Die Termination using ODT pin
Average Refresh Period 7.8us at lower than TCASE 85°C,
3.9us at 85°C < TCASE < 95°C
Asynchronous Reset
Height 1.291" (32.80mm) w/heatsink, double sided
component